TSMC Sets 2030 Target for High-NA EUV Adoption, New Photomask Format by 2033
TSMC has announced plans to adopt High-NA EUV lithography for high-volume manufacturing starting in 2030, initially using conventional 6x6-inch photomasks. The company intends to build a pilot line with 6x12-inch photomasks in 2031 and bring those systems into production by 2033. The specific process node has not been confirmed, but the timeline suggests A10 or A11 as likely candidates.
TSMC's shift to High-NA EUV marks a departure from its earlier strategy of extending existing Low-NA tools. The new scanners offer an 8nm single-exposure resolution versus 13nm, but using standard 6x6 masks halves the exposure field, forcing chipmakers to stitch fields or adopt multi-chiplet designs for large AI accelerators.
To overcome this, TSMC and ASML are preparing a transition to larger 6x12-inch photomasks. This change requires a complete industry overhaul, affecting EDA software, mask production, and handling equipment. ASML's CEO confirmed support from Intel, TSMC, and Samsung, with the larger masks enabling greater productivity and efficiency for future nodes.
The adoption of High-NA EUV could eventually lower the cost and energy consumption of advanced AI and data-center chips, benefiting businesses and consumers reliant on cloud services. However, the massive capital expenditure and industry-wide coordination required for the photomask transition may delay these benefits, potentially consolidating market power among leading foundries. This could influence chip pricing and availability for electronics manufacturers, ultimately affecting the pace of technological upgrades available to the public.